Feedsee Electronics : Tiny 45 Nanometer Transistors : Processor prototype promises high-performance multi-core computing
Intel is using two dramatically new materials to build the insulating walls and switching gates of its 45 nanometer transistors. Hundreds of millions of these microscopic transistors - or switches - will be inside the next generation Intel Core 2 Duo, Intel Core 2 Quad, and Xeon families of multi-core processors. The company has five early-version products up and running - the first of fifteen 45nm processor products planned from Intel. The transistor feat allows the company to continue delivering record-breaking PC, laptop and server processor speeds, while reducing the amount of electrical leakage from transistors that can hamper chip and PC design, size, power consumption, noise and costs. The early versions, which will be targeted at five different computer market segments, are running Windows Vista, Mac OS X, Windows XP and Linux operating systems, as well as various applications. Intel has successfully shrunk the silicon dioxide gate dielectric to as little as 1.2nm thick - equal to five atomic layers - on our previous 65nm process technology, but the continued shrinking has led to increased current leakage through the gate dielectric, resulting in wasted electric current and unnecessary heat.